Energy balance model of high-power semiconductor lasers at high-pumping current

Sergey O. Slipchenko; Olga Soboleva; Yulia Bobretsova; Polina Gavrina; Natalia Rudova

doi:10.1117/12.2546263

2 March 2020 Energy balance model of high-power semiconductor lasers at high-pumping current

Sergey O. Slipchenko, Olga Soboleva, Yulia Bobretsova, Polina Gavrina, Natalia Rudova

Proceedings Volume 11274, Physics and Simulation of Optoelectronic Devices XXVIII; 112740K (2020) https://doi.org/10.1117/12.2546263
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

The first results are presented, which showed general patterns explaining the influence of drift velocity saturation effects on the light-current curve for an example AlGaAs/InGaAs/GaAs laser heterostructure with an ultra-wide asymmetric waveguide emitting in the 1060 nm spectral range at ultrahigh pump currents (tens of kA/cm² ). The study carried out clearly shows the limitations of the simplest drift-diffusion models that take into account and do not take into account the saturation of the drift velocity. It is shown that when analyzing high-power semiconductor lasers at high pump currents, it is necessary to take into account the effect of heating of charge carriers in the waveguide by an electric field. The inclusion of an additional mechanism of internal optical loss obtained in the energy balance model made it possible to obtain a satisfactory agreement between the calculated light-current curves and the experimental ones.

Conference Presentation

Citation Download Citation

Sergey O. Slipchenko, Olga Soboleva, Yulia Bobretsova, Polina Gavrina, and Natalia Rudova "Energy balance model of high-power semiconductor lasers at high-pumping current", Proc. SPIE 11274, Physics and Simulation of Optoelectronic Devices XXVIII, 112740K (2 March 2020); https://doi.org/10.1117/12.2546263

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