Presentation + Paper
3 March 2020 Advanced analysis for hot-carriers photoluminescence spectrum
Author Affiliations +
Abstract
Photoluminescence spectroscopy is a powerful technique to investigate the properties of photo-generated hot carriers in materials in steady state conditions. Hot carrier temperature can be determined via fitting the emitted PL spectrum with the generalized Planck’s law. However, this analysis is not trivial, especially for nanostructured materials, such as quantum wells, with a modified density of states due to quantum confinement effects. Here, we present comprehensively different methods to determine carrier temperature via fitting the emitted PL spectrum with the generalized Planck’s law and discuss under what conditions it is possible to simplify the analysis.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hamidreza Esmaielpour, Maxime Giteau, Amaury Delamarre, François Gibelli, Dac-Trung Nguyen, Nicolas Cavassilas, Yoshitaka Okada, Jean-François Guillemoles, Laurent Lombez, and Daniel Suchet "Advanced analysis for hot-carriers photoluminescence spectrum", Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750A (3 March 2020); https://doi.org/10.1117/12.2547244
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Indium gallium arsenide

Gallium arsenide

Quantum wells

Luminescence

Solar cells

Electrons

Nanostructuring

Back to Top