Presentation
10 March 2020 Analysis of perimeter recombination on multijunction solar cells using luminescence imaging (Conference Presentation)
Hao Xu, Hassanet Sodabanlu, Matthew M. Wilkins, Amaury Delamarre, Theodorus J. Wijaya, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama
Author Affiliations +
Abstract
This paper describes a study of perimeter recombination on millimeter-scale multijunction photovoltaic cells using luminescence characterizations and a quasi-3D PV modeling. Device performance of controlled GaAs 1J cells shows an obvious perimeter dependency. By contrast, the performance of controlled InGaP 1J cells is less dependent on perimeters. Corresponding InGaP/GaAs 2J cells are assessed whose results exhibit combined contributions from both subcells. Luminescence method using current transport efficiency mapping and the PV modeling are able to reveal the influence of perimeter recombination and series resistance effect for individual subcells.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hao Xu, Hassanet Sodabanlu, Matthew M. Wilkins, Amaury Delamarre, Theodorus J. Wijaya, Kentaroh Watanabe, Yoshiaki Nakano, and Masakazu Sugiyama "Analysis of perimeter recombination on multijunction solar cells using luminescence imaging (Conference Presentation)", Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750K (10 March 2020); https://doi.org/10.1117/12.2545575
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KEYWORDS
Gallium arsenide

Luminescence

Multijunction solar cells

Indium gallium phosphide

Semiconducting wafers

Metalorganic chemical vapor deposition

Resistance

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