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Ultra-thin (< 100 nm absorber thickness) GaAs cells are a promising avenue for the design of solar cells with increased radiation tolerance for space applications. To address the high transmission loss through such thin absorber layers, rigorous coupled-wave analysis and a semi-analytical waveguide model are used to investigate the effectiveness of silver/dielectric hexagonal grating structures placed on the back of a thin (86 nm) GaAs cell. The grating is formed of silver disks in a dielectric (SiNχ), and simulations indicate an optimum period of 600-700 nm with a grating thickness around 100 nm. Using the results of external quantum efficiency and light current-voltage measurements of thin devices without light-trapping features, predicted efficiencies for cells with a grating structure are found to be up to double that of the cells without light-trapping designs, showing a significant potential for current enhancement through light-trapping.
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Phoebe Pearce, Larkin Sayre, Andrew Johnson, Louise Hirst, Nicholas Ekins-Daukes, "Design of photonic light-trapping structures for ultra-thin solar cells," Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 112750T (3 March 2020); https://doi.org/10.1117/12.2550136