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3 March 2020 Dilute nitride photodetector arrays for sensing applications
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Proceedings Volume 11276, Optical Components and Materials XVII; 112760H (2020) https://doi.org/10.1117/12.2546295
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Emerging applications in sensing, LIDAR, spectroscopy, and SWIR imaging require photodetectors operating at wavelengths beyond the range of silicon technology and that can be produced cost-effectively for very high-volume consumer and commercial markets. In this paper, Array Photonics, Inc. introduces a new generation of photodetectors designed to meet these requirements. We provide an update on PIN photodetectors and detector arrays based on our dilute nitride material (GaInNAsSb) grown epitaxially on and lattice matched to gallium arsenide (GaAs) substrates. We present our latest photodetector results demonstrating broadband operation from 450 nm to 1450 nm with peak responsivity of over 0.85 A/W at 1300 nm and dark current density of 3×10-5 A/cm2 at -1V bias voltage. These dilute nitride-on-GaAs photodetectors are now commercially available as single elements, 1-D arrays and small 2-D arrays and are referred to as eGaAs™ (extended GaAs) photodetectors. We also briefly discuss ongoing work to migrate from 4” (100 mm) to 6” (150 mm) GaAs wafers and the implementation of larger size 2-D arrays for imaging applications in the automotive and industrial markets.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Siala, M. Naydenkov, R. Roucka, A. Maros, L. Gao, D. Ding, F. Suarez, and P. Dowd "Dilute nitride photodetector arrays for sensing applications", Proc. SPIE 11276, Optical Components and Materials XVII, 112760H (3 March 2020); https://doi.org/10.1117/12.2546295
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