Paper
2 March 2020 Sub-terahertz detection by fin-shaped GaN/AlGaN transistors
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Abstract
We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors (FinFETs) with two lateral Schottky barrier gates exactly placed at the edges of the fin-shaped transistor channel. This kind of FinFET modification (called EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. Moreover, due to depletion, regions of the channel at a certain range of reverse bias form a nanowire, which is beneficial for the tunable resonant THz detection. Our studies of current-voltage characteristics and response in the sub-terahertz frequency range confirm the validity of the approach.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Sai, D. B. But, G. Cywinski, M. Dub, M. Sakowicz, P. Prystawko, S. Rumyantsev, and W. Knap "Sub-terahertz detection by fin-shaped GaN/AlGaN transistors", Proc. SPIE 11279, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII, 1127905 (2 March 2020); https://doi.org/10.1117/12.2547298
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KEYWORDS
Field effect transistors

Plasma

Terahertz radiation

Gallium nitride

Sensors

Terahertz detection

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