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10 March 2020 Next-generation photo-conductive THz devices for 1550nm excitation (Conference Presentation)
Björn Globisch, Robert B. Kohlhaas, Steffen Breuer, Lars Liebermeister, Simon Nellen, Martin Schell
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Proceedings Volume 11279, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII; 1127911 (2020) https://doi.org/10.1117/12.2546113
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
A new generation of photoconductive antennas (PCAs) compatible with 1550 nm excitation for terahertz time-domain spectroscopy is presented. Iron (Fe) doped InGaAs grown by molecular beam epitaxy is used as the underlying photoconductor. Due to the advantageous combination of ultrashort carrier lifetime and excellent electronic properties, InGaAs:Fe based PCAs increase the dynamic range for frequencies from 1 THz – 6 THz by more than 10 dB compared to the state-of-the-art.
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Björn Globisch, Robert B. Kohlhaas, Steffen Breuer, Lars Liebermeister, Simon Nellen, and Martin Schell "Next-generation photo-conductive THz devices for 1550nm excitation (Conference Presentation)", Proc. SPIE 11279, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XIII, 1127911 (10 March 2020); https://doi.org/10.1117/12.2546113
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KEYWORDS
Terahertz radiation
Antennas
Iron
Terahertz spectroscopy
Transceivers
Indium gallium arsenide
Molecular beam epitaxy
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