Reversible Semiconductor-To-Metal Transition Of VO[sub]x[/sub] Thin Films Prepared By The Sol-Gel Method

L. S. Hou; S. W. Lu; F. X. Gan

doi:10.1117/12.961470

21 December 1989 Reversible Semiconductor-To-Metal Transition Of VO_x Thin Films Prepared By The Sol-Gel Method

L. S. Hou, S. W. Lu, F. X. Gan

Proceedings Volume 1128, Glasses for Optoelectronics; (1989) https://doi.org/10.1117/12.961470
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Using VO(i-0C3H7)3 as the starting material VOx thin films have been prepared on silica glass substrates by the Sol-Gel dip-coating method and the subsequent heat treatment under vacuum conditions. These thin films show a reversible semiconductor-to-metal phase transition at 67°C. The change of transmittance in the near IR region due to the phase transition is as high as 50%. Infrared spectra show that the value of x is close to 2.

Citation Download Citation

L. S. Hou, S. W. Lu, and F. X. Gan "Reversible Semiconductor-To-Metal Transition Of VO_x Thin Films Prepared By The Sol-Gel Method", Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); https://doi.org/10.1117/12.961470

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