Translator Disclaimer
Paper
21 December 1989 Reversible Semiconductor-To-Metal Transition Of VOx Thin Films Prepared By The Sol-Gel Method
Author Affiliations +
Proceedings Volume 1128, Glasses for Optoelectronics; (1989) https://doi.org/10.1117/12.961470
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
Using VO(i-0C3H7)3 as the starting material VOx thin films have been prepared on silica glass substrates by the Sol-Gel dip-coating method and the subsequent heat treatment under vacuum conditions. These thin films show a reversible semiconductor-to-metal phase transition at 67°C. The change of transmittance in the near IR region due to the phase transition is as high as 50%. Infrared spectra show that the value of x is close to 2.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. S. Hou, S. W. Lu, and F. X. Gan "Reversible Semiconductor-To-Metal Transition Of VOx Thin Films Prepared By The Sol-Gel Method", Proc. SPIE 1128, Glasses for Optoelectronics, (21 December 1989); https://doi.org/10.1117/12.961470
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Optical properties of spin-coated SnS2 thin films
Proceedings of SPIE (January 18 2018)
Sol-gel derived BaTiO3 thin films
Proceedings of SPIE (November 01 1991)
Radiation-stable infrared optical components
Proceedings of SPIE (April 20 1998)
Modification of sol-gel coatings by ion implantation
Proceedings of SPIE (October 13 1994)

Back to Top