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10 March 2020 Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation)
Justin Goodrich, Hanlin Fu, Damir Borovac, Nelson Tansu
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Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 1128005 (2020) https://doi.org/10.1117/12.2548752
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Experimental measurements of optical and crystallinity properties of MOCVD-grown quaternary AlGaInN lattice-matched to GaN are presented. The bandgaps, carrier life times, optical constants (n vs. k), doping profiles, effective masses, and structural and surface information from XRD and AFM are presented. This study reports important material parameters for the alloy, which will be key in the design and application of these alloys for UV and visible spectral regime optoelectronic devices.
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Justin Goodrich, Hanlin Fu, Damir Borovac, and Nelson Tansu "Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 1128005 (10 March 2020); https://doi.org/10.1117/12.2548752
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KEYWORDS
Crystal optics
Gallium nitride
Crystals
Aluminum
Gallium
Heterojunctions
Luminescence
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