Blue semipolar III-nitride vertical-cavity surface-emitting lasers

Jared A. Kearns; Nathan C. Palmquist; Joonho Back; SeungGeun Lee; Daniel A. Cohen; Steven P. DenBaars; Shuji Nakamura

doi:10.1117/12.2540508

16 February 2020 Blue semipolar III-nitride vertical-cavity surface-emitting lasers

Jared A. Kearns, Nathan C. Palmquist, Joonho Back, SeungGeun Lee, Daniel A. Cohen, Steven P. DenBaars, Shuji Nakamura

Proceedings Volume 11280, Gallium Nitride Materials and Devices XV; 112800H (2020) https://doi.org/10.1117/12.2540508
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

A loss analysis of blue semipolar (20-2-1) vertical-cavity surface-emitting lasers with ion implanted apertures (IIA) reveals the presence of loss due to absorption in the implant and other absorbing regions. Devices using a buried tunnel junction (BTJ) scheme to confine the current are then analyzed to find the absence of any excess losses. The effect of changing the number of DBR periods on both device types is simulated to give a 70% and a 95% increase in output power for the IIA and BTJ devices, respectively, with the removal of one period from the top DBR at 10 kA/cm². The mode structure of two different BTJ devices with different index confinements is compared to show that the 0.034 increase in refractive index difference significantly increased the prevalence of higher order modes.

Conference Presentation

Citation Download Citation

Jared A. Kearns, Nathan C. Palmquist, Joonho Back, SeungGeun Lee, Daniel A. Cohen, Steven P. DenBaars, and Shuji Nakamura "Blue semipolar III-nitride vertical-cavity surface-emitting lasers", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800H (16 February 2020); https://doi.org/10.1117/12.2540508

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