Electron-phonon coupling and electron mobility in degenerately doped oxides from first-principles (Conference Presentation)

Marco D. Santia; David C. Look; Stefan C. Badescu

doi:10.1117/12.2552953

10 March 2020 Electron-phonon coupling and electron mobility in degenerately doped oxides from first-principles (Conference Presentation)

Marco D. Santia, David C. Look, Stefan C. Badescu

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 1128104 (2020) https://doi.org/10.1117/12.2552953
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Recent developments in growing highly n-doped wide bandgap oxides like β-Ga2O3 and more recently ZnGa2O4 hint to important applications, such as transparent electrodes and ohmic contacts. Attempts to interpret the phonon contribution to the measured magnetoconductivity raise fundamental questions on the interplay between the large number of phonon modes in these lattices, electron-phonon scattering, and lattice disorder. Here, we present density functional theory (DFT) modeling of electron-phonon scattering for a wide range of n-carrier concentrations and temperatures in β-Ga2O3 and ZnGa2O4 . The calculated coupling strengths are corroborated with zone-unfolded phonon spectra extrapolated from a series of simulation supercells of different sizes and with calculated dielectric functions. The results provide a first-principles understanding of dominant low-field mobility features suggested by phenomenological models used traditionally for semiconductors with high lattice symmetry.

Conference Presentation

Citation Download Citation

Marco D. Santia, David C. Look, and Stefan C. Badescu "Electron-phonon coupling and electron mobility in degenerately doped oxides from first-principles (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 1128104 (10 March 2020); https://doi.org/10.1117/12.2552953

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