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9 March 2020 Ultrafast optical switching of femtosecond 1550 nm pulses in silicon modulators (Conference Presentation)
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Proceedings Volume 11285, Silicon Photonics XV; 112850E (2020)
Event: SPIE OPTO, 2020, San Francisco, California, United States
A key challenge to widespread implementation of silicon photonics is achieving optical switching at ultrafast speed and ultralow power using on-chip silicon modulators.  Here we report experiments demonstrating that the ultrafast photo-induced phase transition in VO2 can be harnessed for all-optical in the telecommunications band when small VO2 volumes are integrated within a silicon waveguide.  "On"-to-"off" switching speeds in this in-line modulator are less than 1 ps, thus consistent with Tbps speeds, and switching energies near threshold are less than 500 fJ for modulation depths near 6 dB.  Early results showing significant reductions in switching energies in hybrid VO2:Si ring resonators will also be presented.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kent A. Hallman, Andrey Baydin, Kevin J. Miller, Sharon M. Weiss, and Richard F. Haglund Jr. "Ultrafast optical switching of femtosecond 1550 nm pulses in silicon modulators (Conference Presentation)", Proc. SPIE 11285, Silicon Photonics XV, 112850E (9 March 2020);


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