Electrical annealing for Ge ion-implanted directional couplers

Xingshi Yu; Xia Chen; Milan M. Milosevic; Xingzhao Yan; Shinichi Saito; Graham T. Reed

doi:10.1117/12.2543355

26 February 2020 Electrical annealing for Ge ion-implanted directional couplers

Xingshi Yu, Xia Chen, Milan M. Milosevic, Xingzhao Yan, Shinichi Saito, Graham T. Reed

Proceedings Volume 11285, Silicon Photonics XV; 1128512 (2020) https://doi.org/10.1117/12.2543355
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Electrical annealing of erasable directional couplers (DCs) was realized. Titanium nitride (TiN) micro-heaters were used to electrically heat up and anneal the Ge-ion implanted regions in silicon, which are used as the coupling waveguides in the erasable DCs. The refractive index of implanted silicon was reduced rapidly by electrical annealing, so that the DCs were effectively erased. The whole annealing process can be accomplished in about 2 seconds. Based on the simulation results, the implanted region can be heated up to about 700 °C.

Conference Presentation

Citation Download Citation

Xingshi Yu, Xia Chen, Milan M. Milosevic, Xingzhao Yan, Shinichi Saito, and Graham T. Reed "Electrical annealing for Ge ion-implanted directional couplers", Proc. SPIE 11285, Silicon Photonics XV, 1128512 (26 February 2020); https://doi.org/10.1117/12.2543355

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