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2 March 2020 Wave front phase imaging of wafer geometry using high pass filtering to reveal nanotopography
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Abstract
In this paper we show that Wave Front Phase Imaging (WFPI) has high lateral resolution and high sensitivity enabling it to measure nanotopography and roughness on a silicon wafer by simply acquiring a single image of the entire wafer. WFPI is achieved by measuring the reflected light intensity from monochromatic uncoherent light at two different planes along the optical path with the same field of view. We show that the lateral resolution in the current system used for these experiments is 24μm but can be pushed to less than 5μm by simply adding more pixels to the image sensor, and that the amplitude resolution limit is 0.3nm. Three 2-inch unpatterned silicon wafers were measured, and the nanotopography and roughness was revealed by applying a double Gaussian high pass filter to the global topography data.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Trujillo-Sevilla, J. M. Ramos-Rodríguez, and J. Gaudestad "Wave front phase imaging of wafer geometry using high pass filtering to reveal nanotopography", Proc. SPIE 11287, Photonic Instrumentation Engineering VII, 112870W (2 March 2020); https://doi.org/10.1117/12.2547405
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