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10 March 2020 Ultrafast and ultrabroadband photocurrent microscopy resolves dynamics driving 2D-material photosensors and amorphous oxide thin-film transistors (Conference Presentation)
Kyle T. Vogt, George Mattson, Matt W. Graham
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Proceedings Volume 11288, Quantum Sensing and Nano Electronics and Photonics XVII; 1128818 (2020) https://doi.org/10.1117/12.2536441
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Despite comparatively poor interlayer conductivity photosensors of few-layer semiconducting 2D transition metal dichalcogenides (TMDCs) can be both fast (<70 ps) and highly efficient (IQE>50%). To understand the unexpected result, we use tunable E-fields to isolate the dynamics of interlayer electron-hole dissociation using time-space resolved photocurrent microscopy on semiconducting TMDCs and thin-film transistors. We show how this novel scanning microscopy approach, combines ultrafast photocurrent and transient absorption to identify new long-lived and metastable interlayer electronic states in emerging twisted and stacked 2D and thin-film devices.
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Kyle T. Vogt, George Mattson, and Matt W. Graham "Ultrafast and ultrabroadband photocurrent microscopy resolves dynamics driving 2D-material photosensors and amorphous oxide thin-film transistors (Conference Presentation)", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128818 (10 March 2020); https://doi.org/10.1117/12.2536441
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KEYWORDS
Ultrafast phenomena
Thin films
Transistors
Metals
Picosecond phenomena
Absorption
Confocal microscopy
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