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We here present a novel device architecture consisting of multiple nanoscale electron injectors connected to the same contact and constituting one individual pixel: by appropriate spacing of the injectors within the diffusion length of the photogenerated excess carriers, the fill factor of such multi-injector pixel can be considerably improved. The presented design was successfully implemented into an integrated FPA for SWIR imaging, showing excellent pixel yield, and a sensitivity of ~10 photons. While the high sensitivity is enabled by the small size of the 1μm injectors, the multi-injector design allows to achieve an area fill factor or ~20% of the 30x30μm pixel area, which is considerably higher than that of a single-injector design. In summary, we demonstrate a highly sensitive SWIR FPA based on 1μm electron multi-injector design, which allows for a substantial improvement of the imager’s quantum efficiency and sensitivity. |
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Sensors
Quantum efficiency
Short wave infrared radiation
Staring arrays
Capacitance
Infrared sensors
Photodetectors
