Numerical modeling of opto-electric characterization of GaAs/In0.2Ga0.8As nanowire solar cells

Latef M. Ali

doi:10.1117/12.2551097

26 February 2020 Numerical modeling of opto-electric characterization of GaAs/In_0.2Ga_0.8As nanowire solar cells

Latef M. Ali

Proceedings Volume 11289, Photonic and Phononic Properties of Engineered Nanostructures X; 112891X (2020) https://doi.org/10.1117/12.2551097
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

Numerical simulation of opto-electric characterization of GaAs/In_0.2Ga_0.8As core-shell nanowire solar cells is presented, using a finite difference time-domain (FDTD) modeling method. The results show that the absorption, external quantum efficiency (EQE) of the NW solar cell strongly depends on NW lengths and diameters, Moreover, the effect of the diameters on the current density-voltage (J-V) of the NW solar cell was calculated.

Citation Download Citation

Latef M. Ali "Numerical modeling of opto-electric characterization of GaAs/In_0.2Ga_0.8As nanowire solar cells", Proc. SPIE 11289, Photonic and Phononic Properties of Engineered Nanostructures X, 112891X (26 February 2020); https://doi.org/10.1117/12.2551097

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