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9 March 2020 Analysis of tandem rare-earth-semiconductor radiation-balanced lasers (Conference Presentation)
Jacob B. Khurgin
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Proceedings Volume 11298, Photonic Heat Engines: Science and Applications II; 112980R (2020) https://doi.org/10.1117/12.2546960
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
High Power Semiconductor Radiation Balanced Laser (RBL) is an attractive proposition, however, both theoretical and experimental research has shown that fully balanced semiconductor RBL remains an elusive goal. At the same time, rare-earth doped materials have been successfully optically cooled. In this talk we present the investigation of tandem RBL consisting of semiconductor vertically emitting laser (VECSEL) that is cooled by a rare earth doped material in thermal contact with it and show that substantial power can be obtain in the radiation balanced regime.
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Jacob B. Khurgin "Analysis of tandem rare-earth-semiconductor radiation-balanced lasers (Conference Presentation)", Proc. SPIE 11298, Photonic Heat Engines: Science and Applications II, 112980R (9 March 2020); https://doi.org/10.1117/12.2546960
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KEYWORDS
Analytical research
Semiconductor lasers
Semiconductors
High power lasers
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