High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)

Ronald A. Arif; Mark McKee; Eric Armour; Weimin Dong; Alex Zhang; Bojan Mitrovic; Drew Hanser; Ajit Paranjpe

doi:10.1117/12.2544914

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9 March 2020 High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)

Ronald A. Arif, Mark McKee, Eric Armour, Weimin Dong, Alex Zhang, Bojan Mitrovic, Drew Hanser, Ajit Paranjpe

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Proceedings Volume 11300, Vertical-Cavity Surface-Emitting Lasers XXIV; 113000L (2020) https://doi.org/10.1117/12.2544914
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

We’ve developed a next-generation MOCVD platform for high-performance, commercial VCSEL production. The tool is capable of achieving total population uniformity >95% yield in +/- 3nm bin on 6” GaAs. In addition, the tool is capable to go >300 runs between maintenance while maintaining very fast growth rate up to 4.2micron / hr and low [C] impurity <2E17 cm-3. Another parameter critical to VCSEL is defectivity, where <0.5 defects / cm2 @ >2 micron size have been demonstrated. Correlation of epi and VCSEL device parameters such as threshold current density (Jth) and power conversion efficiency will be discussed.

Conference Presentation

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Ronald A. Arif, Mark McKee, Eric Armour, Weimin Dong, Alex Zhang, Bojan Mitrovic, Drew Hanser, and Ajit Paranjpe "High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)", Proc. SPIE 11300, Vertical-Cavity Surface-Emitting Lasers XXIV, 113000L (9 March 2020); https://doi.org/10.1117/12.2544914

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