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9 March 2020 High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)
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Abstract
We’ve developed a next-generation MOCVD platform for high-performance, commercial VCSEL production. The tool is capable of achieving total population uniformity >95% yield in +/- 3nm bin on 6” GaAs. In addition, the tool is capable to go >300 runs between maintenance while maintaining very fast growth rate up to 4.2micron / hr and low [C] impurity <2E17 cm-3. Another parameter critical to VCSEL is defectivity, where <0.5 defects / cm2 @ >2 micron size have been demonstrated. Correlation of epi and VCSEL device parameters such as threshold current density (Jth) and power conversion efficiency will be discussed.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ronald A. Arif, Mark McKee, Eric Armour, Weimin Dong, Alex Zhang, Bojan Mitrovic, Drew Hanser, and Ajit Paranjpe "High-performance As/P MOCVD platform for emerging photonics applications (Conference Presentation)", Proc. SPIE 11300, Vertical-Cavity Surface-Emitting Lasers XXIV, 113000L (9 March 2020); https://doi.org/10.1117/12.2544914
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