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9 March 2020 Impact of top mirror power reflectance on 980-nm VCSEL performance (Conference Presentation)
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Abstract
980 nm VCSELs with different numbers of top dielectric DBR periods added to a 5.5-period top semiconductor DBR and with various oxide aperture diameters are investigated to determine the impact of the added dielectric DBR’s impact on the static and dynamic properties of the VCSELs. For VCSELs with the same oxide aperture diameter we observe smaller small-signal modulation bandwidth and lower D-factor for the VCSELs with more pairs of dielectric DBRs. For the VCSELs with 4 μm oxide aperture diameters with 8 and 12 periods of added top dielectric DBRs we measured bandwidths of 29 and 26 GHz, respectively.
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© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Magdalena Marciniak, Marcin Gebski, Artur Broda, Jan Muszalski, Tomasz Czyszanowski, and James A. Lott "Impact of top mirror power reflectance on 980-nm VCSEL performance (Conference Presentation)", Proc. SPIE 11300, Vertical-Cavity Surface-Emitting Lasers XXIV, 113000Q (9 March 2020); https://doi.org/10.1117/12.2547300
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