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17 March 2020 Energy barrier layers for high-power semiconductor lasers of 1550 nm spectral range (Conference Presentation)
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Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011G (2020) https://doi.org/10.1117/12.2546163
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
The effect of the number and position of AlInAs energy barrier layers on the output characteristics of high-power multimode AlGaInAs / InP lasers, spectral range 1400–1600 nm, has been studied. It was shown that the use of energy barriers allows increasing the laser maximum output power 1.5-2 times. It was found that the barrier layer should be installed at the waveguide-cladding heterojunction from the p-side in order to localize electrons in the waveguide layer. The study was supported by the Russian Science Foundation, project No. 19-79-30072
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikita Pikhtin, Dmitrii Veselov, Yulia Bobretsova, Lyudmila Vavilova, Kirill Bakhvalov, Vyacheslav Golovin, Sergey Slipchenko, and Peter S. Kop’ev "Energy barrier layers for high-power semiconductor lasers of 1550 nm spectral range (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011G (17 March 2020); https://doi.org/10.1117/12.2546163
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