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5 March 2020 Surface Bragg gratings for high brightness lasers
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Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011H (2020)
Event: SPIE OPTO, 2020, San Francisco, California, United States
Among the work done to improve laser performance by optimizing the efficiency of vertical laser structures and thermal management, the spectral quality of the emitted light is a key criterion for the usability of the device. Especially the exact adjustment of the emission wavelength, a small linewidth and a preferably small dependence of the wavelength on temperature changes are important for many applications. These requirements are met by implementing surface gratings into the devices. In the first part of the paper the theoretical tools which are used to simulate and optimize grating reflectivity are presented and discussed. 2D and 3D simulation models confirm possible high reflectivities (more than 90 %) of surface Bragg gratings, if the duty cycle is high (< 0.9). Wafer stepper i-line lithography is particular useful for high volume fabrication with a simple resist process. In order to ensure a sufficiently large duty cycle, high Bragg orders (> 9 @ λ = 630 nm) are required. Electron beam lithography allows better design flexibility and larger etch depth tolerances, but requires a more complex etch mask preparation. With both techniques gratings up to a depth of 1.7 μm can be etched, which is sufficient to reach a high reflectivity for typical AlGaAs based laser structures. A single grating can be thermally tuned up to 7.5 nm. As an example for high power applications a 6 mm long distributed feedback broad laser with a stripe width of 30 μm as part of a spectral beam combining setup is presented. This device achieved a maximum output power of 6 W and a spectral width of 0.3 nm.
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J. Fricke, H. Wenzel, O. Brox, P. Crump, B. Sumpf, K. Paschke, M. Matalla, G. Erbert, A. Knigge, and G. Tränkle "Surface Bragg gratings for high brightness lasers", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011H (5 March 2020);

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