Presentation
9 March 2020 The GaSb-based Y-branch DBR and photonic crystal lasers (Conference Presentation)
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113011M (2020) https://doi.org/10.1117/12.2548623
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We report on development of the mid-infrared antimonide based laser technology targeting dual wavelength operation for intra-cavity difference frequency generation. The devices utilize Y-branch architecture with high order DBR reflectors controlling the laser emission spectrum. The device active region contain asymmetric tunnel coupled quantum well with built in resonant second order nonlinearity. The epitaxially regrown photonic crystal surface emitting GaSb-based lasers will be demonstrated.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leon Shterengas, Jiang Jiang, Takashi Hosoda, Aaron Stein, Alexey Belyanin, Ruiyan Liu, Wonjae Lee, Gela Kipshidze, and Gregory Belenky "The GaSb-based Y-branch DBR and photonic crystal lasers (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113011M (9 March 2020); https://doi.org/10.1117/12.2548623
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KEYWORDS
Photonic crystals

Laser crystals

Difference frequency generation

Laser applications

Mid-IR

Quantum wells

Reflectors

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