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9 March 2020 Recombination physics in III-nitrides and device implication from micro-LEDs to long-wavelength emitters (Conference Presentation)
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We will present recent findings on the physics of III-nitride recombinations, including the demonstration of defect-assisted Auger recombination as a significant droop process, and the intricacies of low-current radiative recombinations, where alloy disorder and Coulomb interaction play a key role. We will discuss implications for future LED applications, from long-wavelength devices to low-power micro-LEDs.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aurelien David "Recombination physics in III-nitrides and device implication from micro-LEDs to long-wavelength emitters (Conference Presentation)", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020V (9 March 2020); https://doi.org/10.1117/12.2535805
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