High-speed and large-capacity integrated silicon photonics technologies

Y. Tanaka

doi:10.1117/12.2545870

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31 January 2020 High-speed and large-capacity integrated silicon photonics technologies

Y. Tanaka

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Proceedings Volume 11308, Metro and Data Center Optical Networks and Short-Reach Links III; 113080K (2020) https://doi.org/10.1117/12.2545870
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

We report on our recent progress in high-speed and large-capacity silicon-photonics-based integrated device technologies targeting large-capacity transmission in both datacom and telecom networks fields. A 70 Gbaud NRZ operation of all-silicon Mach–Zehnder modulator was demonstrated using forward-biased PIN diodes accompanied by passive equalizers. A clear optical eye opening was obtained owing to a broad electro-optic bandwidth of 37 GHz. We also successfully developed co-package-type 16-channels parallel silicon integrated transceivers and demonstrated simultaneous 400 Gbps operation. A novel demultiplexer capable to resolve phase-error-induced impairments is reported. With a simple control algorithm combining the heaters with monitored powers, crosstalks of as low as -58 to -49 dB have been obtained. This technology enabling temperature insensitivity and high yields drastically improves performance and cost of wavelength division multiplexing (WDM) transceivers.

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Y. Tanaka "High-speed and large-capacity integrated silicon photonics technologies", Proc. SPIE 11308, Metro and Data Center Optical Networks and Short-Reach Links III, 113080K (31 January 2020); https://doi.org/10.1117/12.2545870

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