The effects of x-ray irradiation on a-IGZO TFTs used for active pixel sensor

Shan Yeh; Ya-Hsiang Tai

doi:10.1117/12.2542004

16 March 2020 The effects of x-ray irradiation on a-IGZO TFTs used for active pixel sensor

Shan Yeh, Ya-Hsiang Tai

Proceedings Volume 11312, Medical Imaging 2020: Physics of Medical Imaging; 113123X (2020) https://doi.org/10.1117/12.2542004
Event: SPIE Medical Imaging, 2020, Houston, Texas, United States

Abstract

In this paper, the behavior of the amorphous indium–gallium–zinc-oxide (a-IGZO) thin film transistors (TFTs) after X-ray irradiation is analyzed. With the increase of irradiation dose, the a-IGZO TFTs show more negative shifts of threshold voltage (Vth), while both the field effect mobility and subthreshold swing (S.S.) keep fairly constant. Not like being a switch in passive pixel sensor (PPS), the Vth shift of the TFT in active pixel sensor (APS) can result in variation in the output signal. With techniques of compensating Vth shift, a-IGZO TFTs are more suitable for the application of Xray image sensors from the viewpoint of stability.

Citation Download Citation

Shan Yeh and Ya-Hsiang Tai "The effects of x-ray irradiation on a-IGZO TFTs used for active pixel sensor", Proc. SPIE 11312, Medical Imaging 2020: Physics of Medical Imaging, 113123X (16 March 2020); https://doi.org/10.1117/12.2542004

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