Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si

Rahaf M. H. Douhan; Andrey P. Kokhanenko; Kirill A. Lozovoy

doi:10.1117/12.2553199

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11 December 2019 Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si

Rahaf M. H. Douhan, Andrey P. Kokhanenko, Kirill A. Lozovoy

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Proceedings Volume 11322, XIV International Conference on Pulsed Lasers and Laser Applications; 113220P (2019) https://doi.org/10.1117/12.2553199
Event: XIV International Conference on Pulsed Lasers and Laser Applications (AMPL-2019), 2019, Tomsk, Russian Federation

Abstract

The work discusses infrared photodetectors with quantum dots of germanium on silicon. The calculation of certain characteristics of detectors such as: dark current and detectivity in several modes: thermal generation mode, generation-recombination mode and background limited performance mode.

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Rahaf M. H. Douhan, Andrey P. Kokhanenko, and Kirill A. Lozovoy "Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si", Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113220P (11 December 2019); https://doi.org/10.1117/12.2553199

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