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11 December 2019 Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si
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Proceedings Volume 11322, XIV International Conference on Pulsed Lasers and Laser Applications; 113220P (2019) https://doi.org/10.1117/12.2553199
Event: XIV International Conference on Pulsed Lasers and Laser Applications (AMPL-2019), 2019, Tomsk, Russian Federation
Abstract
The work discusses infrared photodetectors with quantum dots of germanium on silicon. The calculation of certain characteristics of detectors such as: dark current and detectivity in several modes: thermal generation mode, generation-recombination mode and background limited performance mode.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rahaf M. H. Douhan, Andrey P. Kokhanenko, and Kirill A. Lozovoy "Detectivity and dark current analysis for quantum dot photodetectors with Ge/Si", Proc. SPIE 11322, XIV International Conference on Pulsed Lasers and Laser Applications, 113220P (11 December 2019); https://doi.org/10.1117/12.2553199
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