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Pushing the novel anamorphic NA=0.55 EUV projection optics to k1 values below 0.4 and to its ultimate resolution limit will require an alternative mask absorber stack. This paper describes the application of rigorous imaging simulations in combination with multi-objective optimization to access the performance of novel absorber materials for the NA=0.55 system. Simulations of various use cases and material options indicate two main types of solutions: high k materials (k>0.05, especially for vertical lines/spaces) and low n materials (n ~ 0.9) to provide phase shift mask solutions for contact arrays.
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Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer, "Perspectives and tradeoffs of novel absorber materials for high NA EUV lithography (Conference Presentation)," Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132309 (24 March 2020); https://doi.org/10.1117/12.2550882