Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features

Ashim Dutta; Jennifer Church; Joe Lee; Brendan O’Brien; Luciana Meli; Chi Chun Liu; Saumya Sharma; Karen Petrillo; Cody Murray; Eric Liu; Katie Lutker-Lee; Qiaowei Lou; Chris Cole; Angélique Raley; Akiteru Ko; Subhadeep Kal; Jake Kaminsky; Aelan Mosden; Henan Zhang; Shan Hu; Lior Huli; Naoki Shibata; Dave Hetzer; Chia-Yun (Sharon) Hsieh

doi:10.1117/12.2551727

6 April 2020 Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features

Ashim Dutta, Jennifer Church, Joe Lee, Brendan O’Brien, Luciana Meli, Chi Chun Liu, Saumya Sharma, Karen Petrillo, Cody Murray, Eric Liu, Katie Lutker-Lee, Qiaowei Lou, Chris Cole, Angélique Raley, Akiteru Ko, Subhadeep Kal, Jake Kaminsky, Aelan Mosden, Henan Zhang, Shan Hu, Lior Huli, Naoki Shibata, Dave Hetzer, Chia-Yun (Sharon) Hsieh

Author Affiliations +

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 113230V (2020) https://doi.org/10.1117/12.2551727
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

As future patterning processes reach the limit of lithographic printability, continuous innovation in mandrel trim or shrink strategies are required to reach sub-20 nm line-space patterning. Growing concerns of lithography defectivity, mask selectivity, line edge roughness (LER), line width roughness (LWR), and critical dimension uniformity (CDU) present significant challenges towards this goal. The authors compare various alternative mandrel trim strategies to highlight potential solutions and drawbacks towards enabling successful printing of mandrels used in extreme ultraviolet (EUV) multi-patterning schemes. Through this comparison, the authors demonstrate the challenges of maintaining adequate pattern transferability while keeping aspect ratio-driven line roughness and material selectivity under control. By process partitioning, the limitations of traditional lithography and etch trimming strategies are highlighted, suggesting the need for new methods of CD reduction after the pattern has been transferred. These new trimming methods offer flexibility in CD control without negatively impacting the mandrel profile and demonstrates better tunability across different material sets, allowing for evaluation of different mask and mandrel material combinations for downstream process optimization.

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Ashim Dutta, Jennifer Church, Joe Lee, Brendan O’Brien, Luciana Meli, Chi Chun Liu, Saumya Sharma, Karen Petrillo, Cody Murray, Eric Liu, Katie Lutker-Lee, Qiaowei Lou, Chris Cole, Angélique Raley, Akiteru Ko, Subhadeep Kal, Jake Kaminsky, Aelan Mosden, Henan Zhang, Shan Hu, Lior Huli, Naoki Shibata, Dave Hetzer, and Chia-Yun (Sharon) Hsieh "Strategies for aggressive scaling of EUV multi-patterning to sub-20 nm features", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113230V (6 April 2020); https://doi.org/10.1117/12.2551727

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