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23 March 2020 Machine learning techniques for OPC improvement at the sub-5 nm node
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Abstract
With conventional methods, improvements in optical proximity correction (OPC) runtime and accuracy can be challenging. Often improvements in accuracy have limited impact or require longer runtimes. Conversely, improvements in runtime often come at a sacrifice to overall correction quality. OPC industries have been developing and applying machine-learning (ML) methods to address both issues together, such as the Newron® machine learning family of products, which provides for both faster ML-based correction and more accurate resist models. Benchmark testing shows that ML-based correction prediction can yield runtime improvements of 30% or more without sacrificing pattern fidelity. It also shows that a ML resist model can deliver simulation accuracy 15% better than a conventional lithography model. This paper discusses the conversion flow from baseline OPC recipe to ML-accelerated recipe and presents results of a study that applies this technique to a sub-5 nm EUV test case, as well as results of a study that leverages a ML resist model to improve OPC accuracy.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Changsoo Kim, Seungjong Lee, Sangwoo Park, No-Young Chung, Jungmin Kim, Narae Bang, Sanghwa Lee, SooRyong Lee, Robert Boone, Pengcheng Li, Jiyoon Chang, Xinxin Zhou, YoungMi Kim, MinSu Oh, Minsung Kim, Rachit Gupta, Jun Ye, and Stanislas Baron "Machine learning techniques for OPC improvement at the sub-5 nm node", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132317 (23 March 2020); https://doi.org/10.1117/12.2551841
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