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23 March 2020 Update of development progress of the high power LPP-EUV light source using a magnetic field
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Abstract
Gigaphoton Inc. has been developing a CO2-Sn-LPP (LPP: Laser Produced Plasma) extreme ultraviolet (EUV) light source system for high-volume manufacturing (HVM) semiconductor lithography. Key components of the source include a high-power CO2 laser with 15 ns pulse duration and 100 kHz repetition frequency, a solid-state pre-pulse laser with 10 ps pulse duration, a high-speed Sn-droplet generator, a high-speed and high accuracy shooting system, and a magnetic field debris mitigation system. To achieve an in-band power of 330 W with long collector mirror lifetime and stable output, we improved the performance of key system components; especially, the laser beam quality at 27 kW CO2 laser output power by upgrading the CO2 laser beam transfer system, the dose stability and suppression of small Tin (Sn) debris, upgrading a shooting control system, improvement of the collector mirror degradation rate by the optimization of H2 flow condition, and changing the EUV chamber structure. We achieved an in-band power of 250W under DC operation and demonstrated a power scalability up to 365W. This paper presents the key technology update of our EUV light source.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gouta Niimi, Shinji Nagai, Tsukasa Hori, Yoshifumi Ueno, Tatsuya Yanagida, Kenichi Miyao, Hideyuki Hayashi, Yukio Watanabe, Tamotsu Abe, Hiroaki Nakarai, Takashi Saito, and Hakaru Mizoguchi "Update of development progress of the high power LPP-EUV light source using a magnetic field", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 1132328 (23 March 2020); https://doi.org/10.1117/12.2544051
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