3D-NAND wafer process monitoring using high voltage SEM with auto e-beam tilt technology

Leeming Tu; Jian Mi; Henry Fan; Haydn Zhou; Felix Xiong; Louis Tu; Gangyi Chen; Chuanyu Shao; Long Zhang; Shinji Kubo

doi:10.1117/12.2551610

20 March 2020 3D-NAND wafer process monitoring using high voltage SEM with auto e-beam tilt technology

Leeming Tu, Jian Mi, Henry Fan, Haydn Zhou, Felix Xiong, Louis Tu, Gangyi Chen, Chuanyu Shao, Long Zhang, Shinji Kubo

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 113250L (2020) https://doi.org/10.1117/12.2551610
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

An auto e-beam tilt technology was used to measure bottom critical dimensions (CD) of High-Aspect Ratio (HAR) contact holes. Results show that traditional Scanning Electron Microscope (SEM) is not capable of catching bottom information, such as bending structures. A new method with hardware and software has been developed to first find the best angle to detect bottom electron signals with high acceleration voltage and then synthesize with multi-angle electron signals. By using this method, accurate bottom CD as well as the angle and direction of bended hole can be measured automatically. It is very effective for inline metrology of HAR 3D structure in semiconductor wafer processing.

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Citation Download Citation

Leeming Tu, Jian Mi, Henry Fan, Haydn Zhou, Felix Xiong, Louis Tu, Gangyi Chen, Chuanyu Shao, Long Zhang, and Shinji Kubo "3D-NAND wafer process monitoring using high voltage SEM with auto e-beam tilt technology", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113250L (20 March 2020); https://doi.org/10.1117/12.2551610

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