Immediate observation of embedded structure after top-down delayering by using “Dig and See” technology for GFIS-SIM based accurate overlay metrology (Conference Presentation)

Shinichi Matsubara; Hiroyasu Shichi; Tomihiro Hashizume; Masami Ikota

doi:10.1117/12.2551673

24 March 2020 Immediate observation of embedded structure after top-down delayering by using “Dig and See” technology for GFIS-SIM based accurate overlay metrology (Conference Presentation)

Shinichi Matsubara, Hiroyasu Shichi, Tomihiro Hashizume, Masami Ikota

Author Affiliations +

Proceedings Volume 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV; 1132513 (2020) https://doi.org/10.1117/12.2551673
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

When manufacturing a semiconductor device having a three-dimensional structure, grasping the positional relationship between the upper and lower structures is important. Our “Dig & See” technology using GFIS-SIM enables such a device to be processed and its lower layers observed by quickly switching ion beams. With this technology, the digging of only the narrow areas of interest expedites delayering. Moreover, the structure of the lower layer can be exposed by top-down delayering and observed without using another tool. Unlike with other methods, the position of the lower layer can be determined with reference to the upper layer position.

Conference Presentation

Citation Download Citation

Shinichi Matsubara, Hiroyasu Shichi, Tomihiro Hashizume, and Masami Ikota "Immediate observation of embedded structure after top-down delayering by using “Dig and See” technology for GFIS-SIM based accurate overlay metrology (Conference Presentation)", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 1132513 (24 March 2020); https://doi.org/10.1117/12.2551673

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