Algebraic model for extremely unlikely resist dissolution events

Andrew R. Neureuther; Luke Long; Patrick Naulleau

doi:10.1117/12.2553048

24 March 2020 Algebraic model for extremely unlikely resist dissolution events

Andrew R. Neureuther, Luke Long, Patrick Naulleau

Proceedings Volume 11326, Advances in Patterning Materials and Processes XXXVII; 1132607 (2020) https://doi.org/10.1117/12.2553048
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

The inherent local inhomogeneity in a uniformly average distribution of dissolution aiding events is shown through an algebraic model to be the likely source of missing contacts in projection printing in positive photoresist resist. A granular model of dissolution with voxels 1-3% of a contact core volume having Poisson statistics is used to show that a configuration of 5-10 voxels with stochastically low dissolution aiding events can block a resist etch front or polymer disentanglement at nominal exposure conditions. To drive missing contact error rates to 10^-13 for 25 nm contacts requires increasing the normal event density by 59% which is 8-9% per decade error rate reduction. In scaling, the event density increases as the inverse of the cube of contact size. For 12 nm contacts an alternating phaseshifting mask may be enabling.

Citation Download Citation

Andrew R. Neureuther, Luke Long, and Patrick Naulleau "Algebraic model for extremely unlikely resist dissolution events", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 1132607 (24 March 2020); https://doi.org/10.1117/12.2553048

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