Presentation + Paper
17 April 2020 Dual tone sub-resolution assist features to improve corner rounding
Author Affiliations +
Abstract
Corner rounding improvement is critical to device performance, yield, and cell area reduction. In this paper, we present a method to use dual tone sub-resolution assist feature (SRAF) to improve both the outer corner rounding and inner corner rounding which in turn enhance the pattern quality. The simulation data and wafer data are presented. A few parameters have been investigated, such as the position of the SRAF, the shape of the SRAF, resist type and mask tone. The preliminary results show that more than 40% reduction of both inner corner rounding and outer corner rounding can be achieved by placing sub-resolution assist features at appropriate locations. The limit of corner rounding improvement is determined by mask rule check (MRC) and resist sensitivities.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng Chi, Hao Tang, Oseo Park, Jing Xue, Jing Guo, Geng Han, Charlie King, Jeff Shearer, and Sean Burns "Dual tone sub-resolution assist features to improve corner rounding", Proc. SPIE 11327, Optical Microlithography XXXIII, 113270E (17 April 2020); https://doi.org/10.1117/12.2550834
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KEYWORDS
SRAF

Photomasks

Semiconducting wafers

Data modeling

Optical proximity correction

Optical lithography

Optics manufacturing

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