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24 March 2020 Challenges in the patterning of RRAM devices for analog computing applications (Conference Presentation)
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Abstract
Emerging memory technologies such as Resistive Memory (RRAM) have gained a lot of attention to meet the requirements of a potential analog computing element, due to its non-volatile characteristics, scalability and energy efficiency. An RRAM device typically consists of a resistive switching layer (e.g. HfO2) sandwiched between two metal electrodes. Since oxygen vacancies are critical to the functioning of the device, it is desirable to achieve residue free etching using oxygen-less plasmas, and preferably minimize exposure to ambient environment. In this work, we discuss the RRAM patterning challenges and their impact on the device characteristics including the switching/forming voltage.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iqbal Saraf, Shyam Sridhar, Christopher Catano, Sergey Voronin, Dexin Kong, Soon-Cheon Seo, Youngseok Kim, Takashi Ando, Nicole Saulnier, and Vijay Narayanan "Challenges in the patterning of RRAM devices for analog computing applications (Conference Presentation)", Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 113290N (24 March 2020); https://doi.org/10.1117/12.2552035
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