Translator Disclaimer
18 December 2019 Study of in situ laser modification of Ga-droplets
Author Affiliations +
Proceedings Volume 11336, AOPC 2019: Nanophotonics; 113360R (2019)
Event: Applied Optics and Photonics China (AOPC2019), 2019, Beijing, China
In this paper, we report the study on the size regulation of Ga-droplets by in situ laser irradiation. Gallium (Ga) droplets are grown on GaAs (001) substrate by molecular beam epitaxy (MBE) and the in situ laser irradiation is carried out by using an ultraviolet pulsed laser. The results show that: The laser irradiation will cause the expansion of Ga-droplets and then the adjacent Ga-droplets can touch with each other and larger Ga-droplets can be formed by the fusion of two or more droplets. So the size of Ga-droplets can be re-modified by laser irradiation and such modification is positively correlated with the irradiation intensity. In other words, we can easily define the size of Ga-droplets by using different laser irradiation energy.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinning Yang, Linyun Yang, Lili Miao, Siyi Zhuang, Zhenwu Shi, and Changsi Peng "Study of in situ laser modification of Ga-droplets", Proc. SPIE 11336, AOPC 2019: Nanophotonics, 113360R (18 December 2019);


Surface modification on GaAs by in-situ pulsed UV laser
Proceedings of SPIE (October 25 2016)
The study of nano structure on in situ UV laser...
Proceedings of SPIE (July 24 2018)
Study of in situ laser modification of InAs GaAs quantum...
Proceedings of SPIE (December 18 2019)
Thermodynamic modeling of pulsed-laser-induced ablation
Proceedings of SPIE (April 09 2003)
Laser-induced surface doping of semiconductors
Proceedings of SPIE (April 08 1996)
Semiconductor quantum nanostructures by droplet epitaxy
Proceedings of SPIE (February 23 2012)
Self-assembled vertically stacked InAs quantum dots
Proceedings of SPIE (May 12 2004)

Back to Top