GaN laser diodes for quantum sensors and optical atomic clocks

S. P. Najda; P. Perlin; M. Leszczyński; S. Stanczyk; C. C. Clark; T. J. Slight; J. Macarthur; L. Prade; L. McKnight

doi:10.1117/12.2552468

30 March 2020 GaN laser diodes for quantum sensors and optical atomic clocks

S. P. Najda, P. Perlin, M. Leszczyński, S. Stanczyk, C. C. Clark, T. J. Slight, J. Macarthur, L. Prade, L. McKnight

Proceedings Volume 11347, Quantum Technologies 2020; 1134714 (2020) https://doi.org/10.1117/12.2552468
Event: SPIE Photonics Europe, 2020, Online Only

Abstract

Quantum technologies containing key GaN laser components will enable a new generation of high precision quantum sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for optical clocks and cold-atom interferometry systems. This includes the [5s²S_1/2-5p²P_1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s₂ ¹S₀-5p¹P₁] cooling transition in neutral strontium clocks at 461 nm and the [5s²s_1/2 – 6p²P_3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.

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S. P. Najda, P. Perlin, M. Leszczyński, S. Stanczyk, C. C. Clark, T. J. Slight, J. Macarthur, L. Prade, and L. McKnight "GaN laser diodes for quantum sensors and optical atomic clocks", Proc. SPIE 11347, Quantum Technologies 2020, 1134714 (30 March 2020); https://doi.org/10.1117/12.2552468

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