Physical properties of W2N thin films deposited by reactive magnetron sputtering

Andrii I. Mostovyi; Mykhailo M. Solovan; Pavlo D. Maryanchuk

doi:10.1117/12.2553984

6 February 2020 Physical properties of W₂N thin films deposited by reactive magnetron sputtering

Andrii I. Mostovyi, Mykhailo M. Solovan, Pavlo D. Maryanchuk

Proceedings Volume 11369, Fourteenth International Conference on Correlation Optics; 113691J (2020) https://doi.org/10.1117/12.2553984
Event: Fourteenth International Conference on Correlation Optics, 2019, Chernivtsi, Ukraine

Abstract

W₂N thin films were prepared by DC reactive magnetron sputtering. The optical and electrical properties of the obtained thin films were investigated. The transmission spectra of thin films of tungsten nitride (deposited on glass substrates) were analyzed. The optical band gap is determined. The electrical resistance of the films is analyzed.

Citation Download Citation

Andrii I. Mostovyi, Mykhailo M. Solovan, and Pavlo D. Maryanchuk "Physical properties of W₂N thin films deposited by reactive magnetron sputtering", Proc. SPIE 11369, Fourteenth International Conference on Correlation Optics, 113691J (6 February 2020); https://doi.org/10.1117/12.2553984

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