Paper
11 October 1989 Single Level Registration Metrology And Overlay Measurements On Production Wafers
O. Hignette, F. Martin, M. Lacombat
Author Affiliations +
Proceedings Volume 1138, Optical Microlithography and Metrology for Microcircuit Fabrication; (1989) https://doi.org/10.1117/12.961757
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
In 1987, we proposed a new concept of optical image processing well fitted to the measurements of two levels overlay and alsopattern registration. Combined on a tool, with a XY laser interferometric stage, this method allows single level absolute metrology and relative measurements between different levels of process. A method is presented to assess the range of absolute accuracy of the instrument from moderately distorted grids generated on wafer steppers, by measuring the same wafer at four flat orientations. The various errors generated by the machine, its limits and capabilities towards lens distorsions and stage errors characterization are discussed. With a precise Z axis metrology coupled to the autofocus and a flat pin recess chuck, a determination of the surface process induced deformations, on printed wafers becomes possible. Results of Z mapping repeatability are presented.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. Hignette, F. Martin, and M. Lacombat "Single Level Registration Metrology And Overlay Measurements On Production Wafers", Proc. SPIE 1138, Optical Microlithography and Metrology for Microcircuit Fabrication, (11 October 1989); https://doi.org/10.1117/12.961757
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KEYWORDS
Semiconducting wafers

Metrology

Overlay metrology

Interferometers

Calibration

Mirrors

Microscopes

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