Infra-Red Microscopy Of Electronic Substrates

Paul C Montgomery; Jean-Pierre Fillard; Pascale Gall; Michel Castagne

doi:10.1117/12.961772

28 September 1989 Infra-Red Microscopy Of Electronic Substrates

Paul C Montgomery, Jean-Pierre Fillard, Pascale Gall, Michel Castagne

Proceedings Volume 1139, Optical Storage and Scanning Technology; (1989) https://doi.org/10.1117/12.961772
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Techniques for high resolution mapping of chemical and native crystal defects in semiconductor substrates are required for basic materials research as well as for quality control in the industrial manufacturing of wafers for electronic devices. Because of the relative ease of use, near infra-red microscopy has recently become popular. Imaging in 350μm thick wafers at a wavelength of 1.0μm presents special problems, particularly with the refractive index of the material being as high as 3.5. The bright field mode is capable of revealing the larger micro-precipitates of around 1μm in size in GaAs, doped GaAs and InP. An improvement in contrast is achieved with the dark field mode. Phase contrast microscopy can be used to show growth striations in doped GaAs and even the paths of disloca-tion lines under certain conditions. One emerging technique is Laser Scanning Tomography (LST) which uses a scanned Nd-YAG laser beam (1.06μm) to reveal micro-precipitates smaller than the diffraction limit of the imaging system. High contrast images are produced showing a more complete picture of micro-precipitates in GaAs, doped GaAs, InP and Si. Tomography can be used to observe the development of the nucleation of oxide precipitates in silicon, from the embryonic stage of particles as small as 20Å, through to larger particles of the order of 1μm. Some of the problems and latest results using these different techniques in this interesting applications area are presented and discussed.

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Paul C Montgomery, Jean-Pierre Fillard, Pascale Gall, and Michel Castagne "Infra-Red Microscopy Of Electronic Substrates", Proc. SPIE 1139, Optical Storage and Scanning Technology, (28 September 1989); https://doi.org/10.1117/12.961772

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