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1 June 2020 Extended SWIR InGaAs/GaAsSb type-II superlattice photodetector on InP
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An InGaAs/GaAsSb Type-II superlattice is explored as an absorber material for extended short-wave infrared detection. A 10.5 nm period was grown with an InGaAs/GaAsSb thickness ratio of 2 with a target In composition of 46% and target Sb composition of 62%. Cutoff wavelengths near 2.8 μm were achieved with responsivity beyond 3 μm. Demonstrated dark current densities were as low as 1.4 mA/cm2 at 295K and 13 μA/cm2 at 235K at -1V bias. A significant barrier to hole extraction was identified in the detector design that severely limited the external quantum efficiency (EQE) of the detectors. A redesign of the detector that removes that barrier could make InGaAs/GaAsSb very competitive with current commercial HgCdTe and extended InGaAs technology.
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Chad A. Stephenson, John F. Klem, Jonathon T. Olesberg, Clark Kadlec, Wesley T. Coon, and Phillip H. Weiner "Extended SWIR InGaAs/GaAsSb type-II superlattice photodetector on InP", Proc. SPIE 11407, Infrared Technology and Applications XLVI, 114070A (1 June 2020);

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