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1 June 2020 Extended SWIR InGaAs/GaAsSb type-II superlattice photodetector on InP
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Abstract
An InGaAs/GaAsSb Type-II superlattice is explored as an absorber material for extended short-wave infrared detection. A 10.5 nm period was grown with an InGaAs/GaAsSb thickness ratio of 2 with a target In composition of 46% and target Sb composition of 62%. Cutoff wavelengths near 2.8 μm were achieved with responsivity beyond 3 μm. Demonstrated dark current densities were as low as 1.4 mA/cm2 at 295K and 13 μA/cm2 at 235K at -1V bias. A significant barrier to hole extraction was identified in the detector design that severely limited the external quantum efficiency (EQE) of the detectors. A redesign of the detector that removes that barrier could make InGaAs/GaAsSb very competitive with current commercial HgCdTe and extended InGaAs technology.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chad A. Stephenson, John F. Klem, Jonathon T. Olesberg, Clark Kadlec, Wesley T. Coon, and Phillip H. Weiner "Extended SWIR InGaAs/GaAsSb type-II superlattice photodetector on InP", Proc. SPIE 11407, Infrared Technology and Applications XLVI, 114070A (1 June 2020); https://doi.org/10.1117/12.2558788
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