Bistability In Semiconductor Etalons And Lasers

Olof Sahlen; Ulf ohlander; Ulf Olin; Peter Blixt; Eric Masseboeuf; Gunnar Landgren; Michael Rask; Nils Nordell

doi:10.1117/12.961899

6 December 1989 Bistability In Semiconductor Etalons And Lasers

Olof Sahlen, Ulf ohlander, Ulf Olin, Peter Blixt, Eric Masseboeuf, Gunnar Landgren, Michael Rask, Nils Nordell

Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961899
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Advances in the area of bistable semiconductor etalons and inhomogeneously pumped laser diodes are reviewed. Results concerning a novel method to fabricate thin AlGaAs etalons that can be thermally stable for 0.5 seconds is presented. The method is based on results from a rigorous numerical model for the temperature rise. Furthermore, results from optical triggering of multisection InGaAsP lasers at 500 MHz repetition rate with less than 1 fJ optical switching energy are reported.

Citation Download Citation

Olof Sahlen, Ulf ohlander, Ulf Olin, Peter Blixt, Eric Masseboeuf, Gunnar Landgren, Michael Rask, and Nils Nordell "Bistability In Semiconductor Etalons And Lasers", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); https://doi.org/10.1117/12.961899

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