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6 December 1989 Monolithic Integration Of GaAs Electronics And Inp Waveguides For Long Wavelength Optical Switching Networks.
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Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961886
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France
Abstract
GaAs MESFETs are very promising for the fabrication of the electronic part of long wavelength InP-based optoelectronic integrated circuits. A special growth procedure has been developed for the heteroepitaxial growth of GaAs on InP. This resulted in MESFET performances similar to results obtained on GaAs substrates. A transconductance of 100 mS/mm and a cutt-off frequency of 7 GHz was obtained for 1.5μm gate MESFETs. The monolithic integration of GaAs MESFETs and InP buried waveguides did not influence their performances.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Ackaert, P. Demeester, D. Lootens, P. Van Daele, D. Rondi, G Glastre, Y. Bourbin, A. Enard, R. Blondeau, and M. Papuchon "Monolithic Integration Of GaAs Electronics And Inp Waveguides For Long Wavelength Optical Switching Networks.", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); https://doi.org/10.1117/12.961886
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