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21 August 2020 GaN vacuum nanoelectronic devices
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Abstract
Solid-state, vacuum nanoelectronic devices have the potential to combine the advantages of vacuum electron devices, such as robustness in harsh environments and high frequency operation, and solid-state devices, such as size, integrability, and low-power operation. In this work, we demonstrate novel GaN nanogap field emission diodes that operate in air and exhibit low turn-on voltage, high field emission current, and excellent on-off ratio. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
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© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George T. Wang, Keshab R. Sapkota, Barbara A. Kazanowska, A. Alec Talin, Francois Leonard, Brendan P. Gunning, and Kevin S. Jones "GaN vacuum nanoelectronic devices", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 114650O (21 August 2020); https://doi.org/10.1117/12.2570577
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