Plateau-like broadband ultraviolet emission from GaN quantum dots formed on multiple facets

Jong-Hoi Cho; Seung-Hyuk Lim; Min-Ho Jang; Chulwon Lee; Hwan-Seop Yeo; Young Chul Sim; Je-Hyung Kim; Samuel Matta; Seoung-Hwan Park; Julien Brault; Yong-Hoon Cho

doi:10.1117/12.2570858

21 August 2020 Plateau-like broadband ultraviolet emission from GaN quantum dots formed on multiple facets

Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Seoung-Hwan Park, Julien Brault, Yong-Hoon Cho

Author Affiliations +

Proceedings Volume 11466, UV and Higher Energy Photonics: From Materials to Applications 2020; 1146603 (2020) https://doi.org/10.1117/12.2570858
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

Since III-nitride semiconductor-based ultraviolet (UV) light-emitting diodes (LEDs) are compact and efficient, they can be suggested as a substitute for conventional arc-lamps. However, reported UV LEDs focused on a narrow range of UV spectrum contrary to conventional arc-lamps. Here, we introduce GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures on a conventional sapphire substrate. These structures include semipolar facets as well as a polar facet, which obtain intrinsically different piezoelectric fields and growth rates of QDs. Consequently, we demonstrated a plateau-like broadband UV emitter ranging from UV-C to UV-A from the GaN QDs.

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Jong-Hoi Cho, Seung-Hyuk Lim, Min-Ho Jang, Chulwon Lee, Hwan-Seop Yeo, Young Chul Sim, Je-Hyung Kim, Samuel Matta, Seoung-Hwan Park, Julien Brault, and Yong-Hoon Cho "Plateau-like broadband ultraviolet emission from GaN quantum dots formed on multiple facets", Proc. SPIE 11466, UV and Higher Energy Photonics: From Materials to Applications 2020, 1146603 (21 August 2020); https://doi.org/10.1117/12.2570858

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