Optical computing with photonic CMOSFETs: A new way to look into process integration, circuit, and layout designs for next generation ULSI or mixed-signal ASICs

James N. Pan

doi:10.1117/12.2567657

21 August 2020 Optical computing with photonic CMOSFETs: A new way to look into process integration, circuit, and layout designs for next generation ULSI or mixed-signal ASICs

James N. Pan

Author Affiliations +

Proceedings Volume 11467, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII; 1146704 (2020) https://doi.org/10.1117/12.2567657
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

To build Photonic CMOSFETs, a laser diode or LED is fabricated in the CMOS drain regions, and photon sensors, or APDs (Avalanche Photo Diodes) are fabricated in the CMOS channel / well regions. MOSFET, laser, APD are combined as one integral transistor. Selective epitaxial films (compound direct bandgap materials) are deposited on silicon or underlying GaAs to form a laser. When MOSFET is on, light emitted from the laser is absorbed by the APD, causing an avalanche breakdown. The high breakdown current flows through the MOSFET drain region and the laser, to produce more lights. When MOSFET is off, laser and APD are also turned off. Nonlinear optical materials are fabricated inside the Photonic CMOSFETs to modulate the incident and outgoing laser light signals. In addition to electronic signals in metals, CMOS transistors also communicate with focused laser beams - no metals – using optic waveguides. Device models, layout and circuit designs need to adapt to optoelectronic micro networks for expanded fan-out and functionalities.

Conference Presentation

Citation Download Citation

James N. Pan "Optical computing with photonic CMOSFETs: A new way to look into process integration, circuit, and layout designs for next generation ULSI or mixed-signal ASICs", Proc. SPIE 11467, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII, 1146704 (21 August 2020); https://doi.org/10.1117/12.2567657

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