Recent progress on crystal growth of high-quality (110)GaAs-based quantum wells for spin laser

Satoshi Iba; Hidekazu Saito; Yuzo Ohno

doi:10.1117/12.2568561

28 August 2020 Recent progress on crystal growth of high-quality (110)GaAs-based quantum wells for spin laser

Satoshi Iba, Hidekazu Saito, Yuzo Ohno

Proceedings Volume 11470, Spintronics XIII; 114702P (2020) https://doi.org/10.1117/12.2568561
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

(110)-oriented GaAs-based quantum wells (QWs) are promising active layers of spin lasers because of long spin relaxation time at room temperature. So far, (110)GaAs/AlGaAs QWs have been investigated intensively and long carrier lifetime of several ns has been reported. In contrast, there have been few reports on the crystal growth of (110)InGaAs/(Al)GaAs QWs despite its great potential to the active layer, resulting in rather poor crystal quality with short carrier lifetime. In this study, we tried to grow high-quality (110)InGaAs/(Al)GaAs QWs by optimizing MBE growth conditions and obtained long carrier and spin lifetime (>1 ns) in the QWs grown with relatively high temperature and As/Ga flux ratio. This reveals that the (110)InGaAs/(Al)GaAs QWs are applicable to the active layer of spin lasers. In addition, we propose a novel structure for a spin transport layer between the ferromagnetic electrode (spin injector) and the active layer of spin laser.

Conference Presentation

Citation Download Citation

Satoshi Iba, Hidekazu Saito, and Yuzo Ohno "Recent progress on crystal growth of high-quality (110)GaAs-based quantum wells for spin laser", Proc. SPIE 11470, Spintronics XIII, 114702P (28 August 2020); https://doi.org/10.1117/12.2568561

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