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20 August 2020 Wave function matching at [110] semiconductor based heterostructures from multiband k.p point of view
Duy-Quang To, Thi Huong Dang, Thi Lam Hoai Nguyen, Viatcheslav Safarov, Henri-Jean Drouhin, Henri Jaffrès
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Proceedings Volume 11470, Spintronics XIII; 114702R (2020) https://doi.org/10.1117/12.2570951
Event: SPIE Nanoscience + Engineering, 2020, Online Only
Abstract
In this talk, we will present our general multiband k. p approach to describe the properties of spin-polarized transport and spin-dependent tunneling within semiconductors interfaces and related heterostructures. Hereafter, we will apply our formalism and platform to describe the properties of spin-dependent tunneling along the particular [110]-direction. This represents a nontrivial case for the description of the spin-current because of the presence of order terms in the wave vector k higher than two in the effective Hamiltonian. We demonstrate here that the multiband techniques employed and developed here beyond the actual state of the art also appear to be a perfect numerical tool to check and validate some analytical developments e.g. based on perturbation technique approaches, also allowing to alleviate some fundamental analytical issues.
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Duy-Quang To, Thi Huong Dang, Thi Lam Hoai Nguyen, Viatcheslav Safarov, Henri-Jean Drouhin, and Henri Jaffrès "Wave function matching at [110] semiconductor based heterostructures from multiband k.p point of view", Proc. SPIE 11470, Spintronics XIII, 114702R (20 August 2020); https://doi.org/10.1117/12.2570951
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KEYWORDS
Heterojunctions
Semiconductors
Group IV semiconductors
Group III-V semiconductors
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